| PART |
Description |
Maker |
| M59DR016 M59DR016C M59DR016C100ZB1T M59DR016C100ZB |
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
16 Mbit 1Mb x16 Dual Bank Page 1.8V Supply Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M58MR016-ZCT M58LR016D100ZC6T M58LR016C120ZC6T M58 |
16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory 16兆x16插槽，复用的I / O，双行，突发1.8V电源快闪记忆
|
STMicroelectronics N.V.
意法半导
|
| SST36VF1601C-70-4C-B3KE SST36VF1601C-70-4C-EKE SST |
16 Mbit (x8/x16) Dual-Bank Flash Memory
16 Mbit (x8/x16) Concurrent SuperFlash
|
SST[Silicon Storage Technology, Inc]
|
| M29DW127G M29DW127G70NF6E |
128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory
|
Numonyx B.V
|
| M36DR432AD M36DR432AD10ZA6T M36DR432AD12ZA6T M36DR |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M36W0R6050B0ZAQT |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
|
ST Microelectronics
|
| M36W216TI-ZAT M36W216BIZA M36W216TIZA M36W216TI70Z |
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product 16兆x16插槽，开机区块快闪记忆体兆位128KB的x16的SRAM，多个存储产
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product 16兆x16插槽，开机区块快闪记忆体2兆位128KB的x16的SRAM，多个存储产
PV76L14-18P
|
http://
STMicroelectronics N.V.
意法半导
|
| M58MR064-ZCT M58MR064D120ZC6T M58MR064C100ZC6T M58 |
64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory 64兆位4Mb的x16插槽，复用的I / O，双行，突发1.8V电源快闪记忆
|
STMicroelectronics N.V.
意法半导
|
| M29W160EB70N1 M29W160EB70N1T M29W160EB70N6 M29W160 |
16-Bit Edge-Triggered D-Type Flip-Flop With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 16兆位（含2Mb x8兆x16插槽，引导块3V电源快闪记忆
CAP 3300UF 6.3V ELECT FC RADIAL 16兆位（含2Mb x8兆x16插槽，引导块V电源快闪记忆
16 Mbit (2Mb x8 or 1Mb x16 / Boot Block) 3V Supply Flash Memory
16 MBIT (2MB X8 OR 1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
70ns; V(in/out): -0.6 to 0.6V; 16Mbit (2Mb x 8 or 1Mb x 16, boot block) 3V supply flash memory
|
STMicroelectronics N.V.
ST Microelectronics
SGS Thomson Microelectronics
|
| M59DR008E120ZB6T |
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory 8兆位512KB的x16插槽，双行，第低压闪
|
STMicroelectronics N.V.
|
